Current I(H): 15 mA; Enclosure type (semiconductors): TO 220AB; Forward current slew rate di(T)/dt: 50 A/µs; Gate trigger current I(GT): 10 mA; Gate trigger voltage U(GT): 1.5 V; I(T)(RMS): 4 A; I(TSM 50 Hz): 25 A; I(TSM 60 Hz): 27 A; Manufacturer code...
Current I(H): 45 mA; Enclosure type (semiconductors): TO 220AB; Forward current slew rate di(T)/dt: 50 A/µs; Gate trigger current I(GT): 10 mA; Gate trigger voltage U(GT): 1.5 V; I(T)(RMS): 16 A; I(TSM 50 Hz): 155 A; I(TSM 60 Hz): 170 A; Manufacturer...
Average forward current I(T)(AV): 13 A; Current I(H): 60 mA; Enclosure type (semiconductors): TO 220AB; Forward voltage U(F): 1.75 V; Gate trigger current I(GT): 32 mA; Gate trigger voltage U(GT): 1.5 V; I(T)(RMS): 20 A; I(TSM 50 Hz): 200 A; I(TSM 60...
Current I(H): 60 mA; Enclosure type (semiconductors): TO 220F; Forward current slew rate di(T)/dt: 100 A/µs; Gate trigger current I(GT): 50 mA; Gate trigger voltage U(GT): 1.5 V; I(T)(RMS): 8 A; I(TSM 50 Hz): 65 A; I(TSM 60 Hz): 71 A; Manufacturer code...
Additional technical information: Memory size: 32 KB; Clock speed: 100 MHz; Core size: 32-Bit; Enclosure type (semiconductors): LQFP 100; I/O number: 70; Operating temperature (max.): +85 °C; Operating temperature (min.) (num): -40 °C; Packaging type...