Diotec Transistor (BJT) - Discrete BC847B SOT 23 NPN
Additional technical information: Type SMDSOT-23 housingCollector emitter voltage - VCEO 45 VDC collector current - IC: 100 mAPolarity - pin: NPNJunction temperature - Tjmax 150 °CPower loss - Ptot 0,250 W.Collector base current ratio - hfe: 290VCE 5...
Diotec Transistor (BJT) - Discrete BC847C SOT 23 No. of channels 1 NPN Tape cut
NPN transistor Gen. Purpose SOT23.This text is machine translated.
Diotec Transistor (BJT) - Discrete BC856B SOT 23 PNP
Collector current: 100 mA; Collector emitter voltage U(CEO): 65 V; Collector-emitter saturation voltage (max.): 650 mV; DC current gain (hFE): 290; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Power (max) P(TOT): 0.25 W; Transit...
Diotec Transistor (BJT) - Discrete BC856C-AQ SOT 23 PNP
Collector current: 100 mA; Collector emitter voltage U(CEO): 65 V; Collector-emitter saturation voltage (max.): 650 mV; DC current gain (hFE): 520; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Power (max) P(TOT): 0.25 W; Transit...
Diotec Transistor (BJT) - Discrete BC857C SOT 23 No. of channels 1 PNP Tape cut
PNP transistor Gen. Purpose SOT-232.This text is machine translated.
Diotec Transistor (BJT) - Discrete BC857CW SOT 323 PNP
Collector current: 100 mA; Collector emitter voltage U(CEO): 45 V; Collector-emitter saturation voltage (max.): 650 mV; DC current gain (hFE): 520; Enclosure type (semiconductors): SOT 323; Mounting type: Surface-mount; Power (max) P(TOT): 0.2 W; Transit...
Diotec Transistor (BJT) - Discrete BCP53-6 SOT 223 PNP
Collector current: 1000 mA; Collector emitter voltage U(CEO): 80 V; Collector-emitter saturation voltage (max.): 500 mV; DC current gain (hFE): 40; Enclosure type (semiconductors): SOT 223; Mounting type: Surface-mount; Power (max) P(TOT): 2 W; Transit...
Diotec Transistor (BJT) - Discrete BCP55-6 SOT 223 NPN
Collector current: 1000 mA; Collector emitter voltage U(CEO): 60 V; Collector-emitter saturation voltage (max.): 500 mV; DC current gain (hFE): 40; Enclosure type (semiconductors): SOT 223; Mounting type: Surface-mount; Power (max) P(TOT): 2 W; Transit...
Diotec Transistor (BJT) - Discrete BCP56-10 SOT 223 NPN
Collector current: 1000 mA; Collector emitter voltage U(CEO): 80 V; Collector-emitter saturation voltage (max.): 500 mV; DC current gain (hFE): 63; Enclosure type (semiconductors): SOT 223; Mounting type: Surface-mount; Power (max) P(TOT): 2 W; Transit...
Diotec Transistor (BJT) - Discrete BCP56-16-AQ SOT 223 NPN
Collector current: 1000 mA; Collector emitter voltage U(CEO): 80 V; Collector-emitter saturation voltage (max.): 500 mV; DC current gain (hFE): 40; Enclosure type (semiconductors): SOT 223; Mounting type: Surface-mount; Power (max) P(TOT): 2 W; Transit...