Infineon Technologies Digital transistor BCR141E6327HTSA1 SOT 23 NPN
Collector current: 100 mA; Collector emitter voltage U(CEO): 50 V; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Power (max) P(TOT): 0.25 W; Type (transistors): NPN
Infineon Technologies Digital transistor BCR148WH6327XTSA1 SOT 23 NPN
Collector current: 100 mA; Collector emitter voltage U(CEO): 50 V; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Power (max) P(TOT): 0.25 W; Type (transistors): NPN
Infineon Technologies Digital transistor BCR158E6327HTSA1 SOT 23 PNP
Collector current: 100 mA; Collector emitter voltage U(CEO): 50 V; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Power (max) P(TOT): 0.20 W; Type (transistors): PNP
Infineon Technologies Digital transistor BCR185E6327HTSA1 SOT 23 PNP
Collector current: 100 mA; Collector emitter voltage U(CEO): 50 V; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Power (max) P(TOT): 0.20 W; Type (transistors): PNP
Infineon Technologies Digital transistor BCR191E6327HTSA1 SOT 23 PNP
Collector current: 100 mA; Collector emitter voltage U(CEO): 50 V; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Power (max) P(TOT): 0.20 W; Type (transistors): PNP
Infineon Technologies Digital transistor BCR505E6327HTSA1 SOT 23 NPN
Collector current: 500 mA; Collector emitter voltage U(CEO): 50 V; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Power (max) P(TOT): 0.33 W; Type (transistors): NPN
Infineon Technologies Digital transistor BCR512E6327HTSA1 SOT 23 NPN
Collector current: 500 mA; Collector emitter voltage U(CEO): 50 V; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Power (max) P(TOT): 0.33 W; Type (transistors): NPN
Infineon Technologies Digital transistor BCR523E6327HTSA1 SOT 23 NPN
Collector current: 500 mA; Collector emitter voltage U(CEO): 50 V; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Power (max) P(TOT): 0.33 W; Type (transistors): NPN
Infineon Technologies Digital transistor BCR533E6327HTSA1 SOT 23 NPN
Collector current: 500 mA; Collector emitter voltage U(CEO): 50 V; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Power (max) P(TOT): 0.33 W; Type (transistors): NPN
Infineon Technologies Digital transistor BCR555E6327HTSA1 SOT 23 PNP
Collector current: 500 mA; Collector emitter voltage U(CEO): 50 V; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Power (max) P(TOT): 0.33 W; Type (transistors): PNP