Collector current: 125 mA; Collector-emitter saturation voltage (max.): 1 V; Creepage distance: 7 mm; Current transfer ratio (min.): 100 %; Current transfer ratio (min.) - current reference: 10 mA; Enclosure type (semiconductors): DIP 16; Fall time: 35...
Collector current: 100 mA; Creepage distance: 7 mm; Current transfer ratio (max.): 320 %; Current transfer ratio (min.): 160 %; Current transfer ratio (min.) - current reference: 320 mA; Enclosure type (semiconductors): DIP 16; Fall time: 2 µs; Forward...
Collector current: 100 mA; Collector-emitter saturation voltage (max.): 400 mV; Creepage distance: 7 mm; Current transfer ratio (max.): 600 %; Current transfer ratio (min.): 50 %; Current transfer ratio (min.) - current reference: 5 mA; Enclosure type...
Collector current: 100 mA; Collector-emitter saturation voltage (max.): 400 mV; Creepage distance: 7 mm; Current transfer ratio (max.): 600 %; Current transfer ratio (min.): 100 %; Current transfer ratio (min.) - current reference: 5 mA; Enclosure type...
Collector-emitter saturation voltage (max.): 500 mV; Creepage distance: 7 mm; Current transfer ratio (min.): 12.5 %; Current transfer ratio (min.) - current reference: 16 mA; Enclosure type (semiconductors): DIP 16; Forward current I(F): 60 mA; Forward...
Inductance (L): 10 µH; Max. temperature: +125 °C; Min. temperature: -55 °C; Nominal current: 189 mA; Product size (height): 2.21 mm; Product size (length): 3.2 mm; Product size (width): 2.49 mm; Resistance (num): 2.1 Ω; Resonance: 33 MHz; Test frequency:...
N Channel TO-220 Power MOSFETs - Vishay IRF510, N channel power MOSFET supplied in a TO-220AB package from Vishay, one of the industry's leading manufacturers.The combination of fast switching times, rugged device construction and low ON resistance give...
A MOSFET transistor is a voltage controlled component and can be directly connected to high-resistance sources. It is, therefore, suited for use as a switch or an analogue amplifier. This transistor is µC, TTL and CMOS compatible. Note: manufacturer...
Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 220AB; I(d): 9.2 A; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): 175 °C; Operating temperature (min.) (num): -55 °C; Packaging type (components): Tube;...
N Channel TO-220 Power MOSFETs - Vishay IRF530PBF, N channel power MOSFET supplied in a TO-220AB package from Vishay, one of the industry's leading manufacturers.The combination of fast switching times, rugged device construction and low ON resistance...