Enclosure type (semiconductors): TO 252AA; Forward current I(F): 10 A; Forward voltage U(F): 0.55 V; Mounting type: Surface-mount; Operating temperature (max.): 150 °C; Peak forward surge current I(FSM): 135 A; Reverse leakage current I(r): 300 µA;...
Enclosure type (semiconductors): DO 214AC; Forward current I(F): 1 A; Forward voltage U(F): 0.50 V; Mounting type: Surface-mount; Operating temperature (max.): 150 °C; Peak forward surge current I(FSM): 30 A; Reverse leakage current I(r): 500 µA; Reverse...
Enclosure type (semiconductors): DO 214AA; Forward current I(F): 2 A; Forward voltage U(F): 0.85 V; Mounting type: Surface-mount; Operating temperature (max.): 150 °C; Peak forward surge current I(FSM): 50 A; Reverse leakage current I(r): 500 µA; Reverse...
Enclosure type (semiconductors): DO 214AA; Forward current I(F): 2 A; Forward voltage U(F): 0.50 V; Mounting type: Surface-mount; Operating temperature (max.): 150 °C; Peak forward surge current I(FSM): 50 A; Reverse leakage current I(r): 500 µA; Reverse...
Enclosure type (semiconductors): DO 214AA; Forward current I(F): 2 A; Forward voltage U(F): 0.50 V; Mounting type: Surface-mount; Operating temperature (max.): 150 °C; Peak forward surge current I(FSM): 50 A; Reverse leakage current I(r): 500 µA; Reverse...
Diode capacitance C(D): 720 pF; Enclosure type (semiconductors): TO 263AB; Forward current I(F): 25 A; Forward voltage U(F): 0.56 V; Mounting type: Surface-mount; Operating temperature (max.): 150 °C; Peak forward surge current I(FSM): 290 A; Reverse...
Diode capacitance C(D): 220 pF; Enclosure type (semiconductors): DO 214AC; Forward current I(F): 3 A; Forward voltage U(F): 0.79 V; Mounting type: Surface-mount; Operating temperature (max.): 150 °C; Peak forward surge current I(FSM): 80 A; Reverse leakage...
Enclosure type (semiconductors): DO 214AC; Forward current I(F): 3 A; Forward voltage U(F): 0.85 V; Mounting type: Surface-mount; Operating temperature (max.): 150 °C; Peak forward surge current I(FSM): 80 A; Reverse leakage current I(r): 100 µA; Reverse...
Diode capacitance C(D): 90 pF; Enclosure type (semiconductors): DO 214AC; Forward current I(F): 3 A; Forward voltage U(F): 0.50 V; Mounting type: Surface-mount; Operating temperature (max.): 150 °C; Peak forward surge current I(FSM): 80 A; Reverse leakage...
Diode capacitance C(D): 250 pF; Enclosure type (semiconductors): DO 214AC; Forward current I(F): 3 A; Forward voltage U(F): 0.70 V; Mounting type: Surface-mount; Operating temperature (max.): 150 °C; Peak forward surge current I(FSM): 80 A; Reverse leakage...