Additional technical information: 1 W; With Heat Sink; Factory colour: Yellow; Forward current I(F): 350 mA; Forward voltage U(F): 2.6 V; Luminous flux (phi): 50 lm; Radiation angle: 110 °; Type (resistor/capacitor): SMD; Wavelength: 588 nm
Additional technical information: 10-40 mW/sr; Casing type (LEDs): 3 mm; Forward current I(F): 20 mA; LED features: LED 3 mm; Radiation angle: 30 °; Type (LEDs): Water clear; Type (resistor/capacitor): Radial lead; Wavelength: 850 nm
Additional technical information: 10-40 mW/sr; Casing type (LEDs): 5 mm; Forward current I(F): 20 mA; LED features: LED 5 mm; Radiation angle: 30 °; Type (LEDs): Water clear; Type (resistor/capacitor): Radial lead; Wavelength: 850 nm
Additional technical information: 4-12 mW/sr; Casing type (LEDs): 3 mm; Forward current I(F): 20 mA; LED features: LED 3 mm; Radiation angle: 30 °; Type (LEDs): Water clear; Type (resistor/capacitor): Radial lead; Wavelength: 940 nm
Additional technical information: 07 mW/sr; Casing type (LEDs): 5 mm; Forward current I(F): 20 mA; LED features: LED 5 mm; Radiation angle: 30 °; Type (LEDs): Water clear; Type (resistor/capacitor): Radial lead; Wavelength: 940 nm
Factory colour: Green; Forward current I(F): 20 mA; Forward voltage U(F): 2.4 V; Light intensity I(V): 40 mcd; Radiation angle: 120 °; Technology (LEDs): AlGaInP; Type (resistor/capacitor): 0805; Wavelength: 570 nm
Factory colour: Green; Forward current I(F): 20 mA; Forward voltage U(F): 2.4 V; Light intensity I(V): 40 mcd; Radiation angle: 120 °; Technology (LEDs): AlInGaP; Type (resistor/capacitor): SMD; Wavelength: 570 nm
Factory colour: White; Forward current I(F): 60 mA; Forward voltage U(F): 3.5 V; Luminous flux (phi): 25 lm; Radiation angle: 120 °; Technology (LEDs): InGaN; Type (resistor/capacitor): 2835
Colour temperature: 1800 2500 K; Factory colour: Warm white; Forward current I(F): 20 mA; Forward voltage U(F): 3.6 V; Light intensity I(V): 2150 mcd; Radiation angle: 120 °; Technology (LEDs): InGaN; Type (resistor/capacitor): SMD
Factory colour: Blue; Forward current I(F): 20 mA; Forward voltage U(F): 3.4 V; Light intensity I(V): 3000 mcd; Radiation angle: 120 °; Technology (LEDs): InGaN; Type (resistor/capacitor): 5050; Wavelength: 465 nm