Diode capacitance C(D): 7 pF; Enclosure type (semiconductors): SOT 23; Forward current I(F): 100 mA; Forward voltage U(F): 30 V; Mounting type: Surface-mount; Operating temperature (max.): +150 °C; Operating temperature (min.) (num): -65 °C; Packaging...
Diode capacitance C(D): 7 pF; Enclosure type (semiconductors): SOT 23; Forward current I(F): 100 mA; Forward voltage U(F): 30 V; Mounting type: Surface-mount; Operating temperature (max.): +150 °C; Operating temperature (min.) (num): -65 °C; Packaging...
Diode capacitance C(D): 7 pF; Enclosure type (semiconductors): SOT 23; Forward current I(F): 100 mA; Forward voltage U(F): 30 V; Mounting type: Surface-mount; Operating temperature (max.): +150 °C; Operating temperature (min.) (num): -65 °C; Packaging...
Diode capacitance C(D): 7 pF; Enclosure type (semiconductors): SOT 23; Forward current I(F): 100 mA; Forward voltage U(F): 30 V; Mounting type: Surface-mount; Operating temperature (max.): +150 °C; Operating temperature (min.) (num): -65 °C; Packaging...
Enclosure type (semiconductors): DO 41; Forward current I(F): 2 A; Forward voltage U(F): 100 V; Mounting type: Through-hole; Operating temperature (max.): +175 °C; Operating temperature (min.) (num): -65 °C; Packaging type (components): Tape on Full...
Diode capacitance C(D): 7 pF; Enclosure type (semiconductors): Mini MELF; Forward current I(F): 200 mA; Forward voltage U(F): 30 V; Mounting type: Surface-mount; Operating temperature (max.): +125 °C; Operating temperature (min.) (num): -65 °C; Packaging...
Diode capacitance C(D): 7 pF; Enclosure type (semiconductors): Mini MELF; Forward current I(F): 200 mA; Forward voltage U(F): 30 V; Mounting type: Surface-mount; Operating temperature (max.): +125 °C; Operating temperature (min.) (num): -65 °C; Packaging...
Diode capacitance C(D): 10 pF; Enclosure type (semiconductors): Mini MELF; Forward current I(F): 150 mA; Forward voltage U(F): 100 V; Mounting type: Surface-mount; Operating temperature (max.): +125 °C; Operating temperature (min.) (num): -65 °C; Packaging...
Diode capacitance C(D): 20 pF; Enclosure type (semiconductors): Mini MELF; Forward current I(F): 350 mA; Forward voltage U(F): 40 V; Mounting type: Surface-mount; Operating temperature (max.): +125 °C; Operating temperature (min.) (num): -65 °C; Packaging...
These diodes have a metal-semiconductor junction instead of a P-N junction. Switching times can therefore be less than 0.1 ns. This makes them suitable for fast digital circuits and microwave systems.