Infineon Technologies BSP149 MOSFET 1 N-channel 1.8 W SOT 223
Cut-off voltage U(DSS): 200 V; Enclosure type (semiconductors): SOT 223; I(d): 0.66 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 1.8 W; R(DS)(on): 3.5 Ω; Type (transistors): N-channel
Infineon Technologies BSP170P MOSFET 1 P-channel 1.8 W SOT 223
Cut-off voltage U(DSS): -60 V; Enclosure type (semiconductors): SOT 223; I(d): -1.90 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 1.8 W; R(DS)(on): 0.3 Ω; Type (transistors): P-channel
Infineon Technologies BSP171P MOSFET 1 P-channel 1.8 W SOT 223
Cut-off voltage U(DSS): -60 V; Enclosure type (semiconductors): SOT 223; I(d): -1.90 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 1.8 W; R(DS)(on): 0.3 Ω; Type (transistors): P-channel
Infineon Technologies BSP295 MOSFET 1 N-channel 1.8 W SOT 223
Cut-off voltage U(DSS): 60 V; Enclosure type (semiconductors): SOT 223; I(d): 1.80 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 1.8 W; R(DS)(on): 0.3 Ω; Type (transistors): N-channel
Infineon Technologies BSP297 MOSFET 1 N-channel 1.8 W SOT 223
Cut-off voltage U(DSS): 200 V; Enclosure type (semiconductors): SOT 223; I(d): 0.66 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 1.8 W; R(DS)(on): 3 Ω; Type (transistors): N-channel
Infineon Technologies BSP315P MOSFET 1 P-channel 1.8 W SOT 223
Cut-off voltage U(DSS): -60 V; Enclosure type (semiconductors): SOT 223; I(d): -1.17 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 1.8 W; R(DS)(on): 0.8 Ω; Type (transistors): P-channel
Infineon Technologies BSP752RXUMA2 PMIC - ELCs High side SOIC 8
Integrated circuits from leading manufacturers. Please read our extensive documentation which is free to download.
Infineon Technologies BSP76E6433HUMA1 PMIC - ELCs Low side TO 261 4
Integrated circuits from leading manufacturers. Please read our extensive documentation which is free to download.
Infineon Technologies BSP89 MOSFET 1 N-channel 1.8 W SOT 223
Cut-off voltage U(DSS): 240 V; Enclosure type (semiconductors): SOT 223; I(d): 0.35 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 1.8 W; R(DS)(on): 7.5 Ω; Type (transistors): N-channel