Configuration (diode): Single; Diode capacitance C(D): 180 pF; Forward current I(F): 3 A; Forward voltage U(F): 60 V; Mounting type: PCB mount; Operating temperature (max.): 150 °C; Operating temperature (min.) (num): -55 °C; Packaging type (components):...
Configuration (diode): Single; Diode capacitance C(D): 115 pF; Forward current I(F): 3 A; Forward voltage U(F): 100 V; Mounting type: PCB mount; Operating temperature (max.): 175 °C; Operating temperature (min.) (num): -55 °C; Packaging type (components):...
Configuration (diode): Single; Enclosure type (semiconductors): DO 204AL; Forward current I(F): 1.1 A; Forward voltage U(F): 850 mV; Forward voltage reference: 1 A; Manufacturer code (components): VIS; Mounting type: Through-hole; Operating temperature...
Configuration (diode): Single; Enclosure type (semiconductors): TO 220AC; Forward current I(F): 15 A; Forward voltage U(F): 560 mV; Forward voltage reference: 15 A; Manufacturer code (components): VIS; Mounting type: Through-hole; Operating temperature...
Configuration (diode): Array - 1 pair, common cathode; Enclosure type (semiconductors): TO 220AB; Forward current I(F): 8 A; Forward voltage U(F): 880 mV; Forward voltage reference: 16 A; Manufacturer code (components): VIS; Mounting type: Through-hole;...
High-performance Schottky-diode with maximum forward current of 200 amperes (rectangle, key degrees 0.5). Especially suitable as a free-wheeling diode for power MOSFET performance module.
These diodes have a metal-semiconductor junction instead of a P-N junction. Switching times can therefore be less than 0.1 ns. This makes them suitable for fast digital circuits and microwave systems.
Configuration (diode): Array - 1 pair, common cathode; Enclosure type (semiconductors): TO 220AB; Forward current I(F): 7.5 A; Forward voltage U(F): 840 mV; Forward voltage reference: 15 A; Manufacturer code (components): VIS; Mounting type: Through-hole;...
Configuration (diode): Single; Enclosure type (semiconductors): DO 204AL; Forward current I(F): 1 A; Forward voltage U(F): 750 mV; Forward voltage reference: 1 A; Manufacturer code (components): VIS; Mounting type: Through-hole; Operating temperature...
These diodes have a metal-semiconductor junction instead of a P-N junction. Switching times can therefore be less than 0.1 ns. This makes them suitable for fast digital circuits and microwave systems.