Vishay SI2301CDS-T1-GE3 MOSFET 1 P-channel 1.6 W SOT 23-3

C(ISS): 405 pF; C(ISS) reference voltage: 10 V; Cut-off voltage U(DSS): 20 V; Enclosure type (semiconductors): SOT 23-3; I(d): 3.1 A; Manufacturer code (components): VIS; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.): +150 °C; Operating temperature (min.) (num): -55 °C; Power (max) P(TOT): 1.6 W; Q(G): 10 nC; Q(G) reference voltage: 4.5 V; R(DS)(on): 112 mΩ; R(DS)(on) reference current: 2.8 A; R(DS)(on) reference voltage: 4.5 V; Series (semiconductors): TrenchFET®; Transistor property: Standard; Type (transistors): P-channel ; U(DSS): 20 V; U(GS)(th) max.: 1 V; U(GS)(th) reference current (max.): 250 µA

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