Vishay IRFD110PBF MOSFET 1 N-channel 1.3 W DIP 4

C(ISS): 180 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): DIP 4; I(d): 1 A; Manufacturer code (components): VIS; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175 °C; Operating temperature (min.) (num): -55 °C; Power (max) P(TOT): 1.3 W; Q(G): 8.3 nC; Q(G) reference voltage: 10 V; R(DS)(on): 540 mΩ; R(DS)(on) reference current: 600 mA; R(DS)(on) reference voltage: 10 V; Transistor property: Standard; Type (transistors): N-channel ; U(DSS): 100 V; U(GS)(th) max.: 4 V; U(GS)(th) reference current (max.): 250 µA

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