ON Semiconductor FDS6930B MOSFET 2 N-channel 900 mW SOIC 8

C(ISS): 412 pF; C(ISS) reference voltage: 15 V; Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): SOIC 8; I(d): 5.5 A; Manufacturer code (components): OnS; Mounting type: Surface-mount; No. of channels: 2; Operating temperature (max.): +150 °C; Operating temperature (min.) (num): -55 °C; Power (max) P(TOT): 900 mW; Q(G): 3.8 nC; Q(G) reference voltage: 5 V; R(DS)(on): 38 mΩ; R(DS)(on) reference current: 5.5 A; R(DS)(on) reference voltage: 10 V; Series (semiconductors): PowerTrench®; Transistor property: Logic level gate; Type (transistors): N-channel ; U(DSS): 30 V; U(GS)(th) max.: 3 V; U(GS)(th) reference current (max.): 250 µA

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