ON Semiconductor FDP18N50 MOSFET 1 N-channel 235 W TO 220 3

C(ISS): 2860 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 500 V; Enclosure type (semiconductors): TO 220 3; I(d): 18 A; Manufacturer code (components): OnS; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +150 °C; Operating temperature (min.) (num): -55 °C; Power (max) P(TOT): 235 W; Q(G): 60 nC; Q(G) reference voltage: 10 V; R(DS)(on): 265 mΩ; R(DS)(on) reference current: 9 A; R(DS)(on) reference voltage: 10 V; Series (semiconductors): UniFET™; Transistor property: Standard; Type (transistors): N-channel ; U(DSS): 500 V; U(GS)(th) max.: 5 V; U(GS)(th) reference current (max.): 250 µA

Price: 5.99 from Conrad Electronic