NXP Semiconductors Transistor (BJT) - Discrete PHE13009,127 TO 220AB No. of channels 1 NPN

Collector current: 12 A; Collector cutoff current: 100 µA; Collector emitter voltage U(CEO): 400 V; Collector-emitter saturation voltage (max.): 2 V; DC current gain (hFE): 8; DC current gain hFE - reference current: 5 A; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): TO 220AB; Manufacturer code (components): NXP; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 80 W; Type (transistors): NPN

Price: 1.99 from Conrad Electronic